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DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * * * Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * * *
SOT-523
Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED, 2kV
TOP VIEW
Gate Protection Diode
G
Source
S
Equivalent circuit
TOP VIEW
Maximum Ratings
Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID Value 50 20 280 Units V V mA
Characteristic
Continuous
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 150 833 -55 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS Min 50 Typ Max 60 1 500 50 1.2 3.0 2.5 2.0 1.4 50 25 5.0 Unit V nA A nA nA V A mS V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 50V, VGS = 0V VGS = 12V, VDS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250A VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz
@ TC = 25C
VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss
0.49 0.5 200 0.5
1.8 1.5 1.2 1.4
Device mounted on FR-4 PCB. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN5L06TK
Document number: DS30926 Rev. 4 - 2
1 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMN5L06TK
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
10
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 75 100 125 150 -25 25 50 0 Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 10 0 -50 RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
1
0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN5L06TK
Document number: DS30926 Rev. 4 - 2
2 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMN5L06TK
TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current
Ordering Information
Part Number DMN5L06TK-7
Notes:
IDR, REVERSE DRAIN CURRENT (A)
(Note 5) Case SOT-523 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)
DAB
YM
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
2008 V May 5 Jun 6
IDR, REVERSE DRAIN CURRENT (A)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
DMN5L06TK
Document number: DS30926 Rev. 4 - 2
3 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated
DMN5L06TK Package Outline Dimensions
A
BC
G H K M
N
J
D
L
SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN5L06TK
Document number: DS30926 Rev. 4 - 2
4 of 4 www.diodes.com
March 2009
(c) Diodes Incorporated

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